RGTVX2TS65DGC11

ТИП

ОПИСАНИЕ

Производитель :

ROHM Semiconductor

Категория :

Одиночные IGBT

Current - Collector (Ic) (Max) :

111 A

Current - Collector Pulsed (Icm) :

240 A

Gate Charge :

123 nC

IGBT Type :

Trench Field Stop

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

TO-247-3

Power - Max :

319 W

Product Status :

Not For New Designs

Reverse Recovery Time (trr) :

-

Supplier Device Package :

TO-247N

Switching Energy :

2.08mJ (on), 1.15mJ (off)

Td (on/off) @ 25°C :

49ns/150ns

Test Condition :

400V, 60A, 10Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 60A

Voltage - Collector Emitter Breakdown (Max) :

650 V